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savantic semiconductor product specification silicon npn power transistors 2SC3220 d escription with to-247 package switching power transistor high breakdown voltage pinning absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 230 v v ceo collector-emitter voltage open base 230 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 10 a i b base current 4 a p d total power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.56 /w pin description 1 base 2 collector;connected to mounting base 3 emitter fig.1 simplified outline (to-247) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3220 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; i b =0 230 v v cesat collector-emitter saturation voltage i c =5a ;i b =0.5a 1.0 v v besat base-emitter saturation voltage i c =5a ;i b =0.5a 1.5 v i cbo collector cut-off current i ceo collector cut-off current at rated voltage 0.1 ma i ebo emitter cut-off current at rated voltage 0.1 ma h fe-1 dc current gain i c =10a ; v ce =2v 15 h fe-2 dc current gain i c =1ma ; v ce =2v 5 f t transition frequency i c =0.6a ; v ce =10v 20 mhz
savantic semiconductor product specification 3 silicon npn power transistors 2SC3220 package outline fig.2 outline dimensions

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